Opposed field magnetoresistive memory sensing

Details Opposed field magnetoresistive memory sensing Opposed field magnetoresistive memory sensing

G - Physics

11

C

352/37

G11C 7/00 (2006.01) G11C 11/15 (2006.01)

Patent

CA 2038469

A method for sensing magnetic states of magnetic bit structures formed of separated double layer, magnetoresistive, ferromagnetic memory films through providing a word line current in a direction which results in a magnetic field due thereto, in the memory films of these bit structures, that is oriented in a direction opposite a common direction followed at least partially by orientations of edge magnetizations in these films that are parallel to the edges thereof, and sensing a change in electrical resistance of these bit structures as a result of that current.

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