H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/38
H01L 29/74 (2006.01) H01L 21/28 (2006.01)
Patent
CA 1156770
ABSTRACT OF THE DISCLOSURE A thyristor has a semiconductor body which includes first and second base layers contacting one another, an n-emitter layer contacting the first base layer, a first electrode on the n-emitter layer a p-emitter layer contacting the second base layer, a second electrode on the p-emitter layer, and controll- able metal insulator-semiconductor emitter short circuit structures located at at least one boundary surface of the semiconductor body. Each of the short cir- cuit structures includes first and second semiconductor regions of a first con- ductivity type, the first region contacting the first electrode, and an inter- mediate third semiconductor region of a second opposite conductivity type be- tween the first and second regions and extending to the boundary surface. An insulated gate is carried over the third region. An emitter layer associated with the metal-insulator-semiconductor structures is divided into a plurality of emitter zones which are respectively provided with portions of the electrode contacting said emitter layer, and the metal-insulator-semiconductor structures are located at the edges of the emitter zones. A common terminal is connected to the insulated gates for receiving a voltage pulse to neutralize the short circuits.
364266
Aktiengesellschaft Siemens
Fetherstonhaugh & Co.
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