Semiconductor device having planar type high withstand...

Details Semiconductor device having planar type high withstand... Semiconductor device having planar type high withstand...

H - Electricity

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H01L 29/732 (2006.01) H01L 21/20 (2006.01) H01L 21/22 (2006.01) H01L 21/331 (2006.01) H01L 21/336 (2006.01) H01L 29/739 (2006.01) H01L 29/78 (2006.01) H01L 29/08 (2006.01)

Patent

CA 2191997

An IGBT having a high withstand voltage, small power consumption and small device formation area. An n-- type semiconductor layer (38) is provided at a portion which is likely to cause surface breakdown, and an n- type semiconductor layer (36) is disposed below the former. Therefore, the theoretical withstand voltage in the n-- type semiconductor layer (38) is higher than the theoretical withstand voltage in the n- type semiconductor layer (36), and the surface breakdown voltage can be correspondingly increased. Since the n- type semiconductor layer (36) having a lower resistance is disposed below the n-- type semiconductor layer (38), the region which affects power consumption of the IGBT has a lower resistance, and power consumption becomes smaller.

L'invention concerne un transistor bipolaire à grille isolée présente une tension de tenue élevée, une faible consommation d'énergie et une zone réduite de formation de dispositifs. Une couche semiconductrice de type n?--¿ (38) est disposée dans une zone susceptible de provoquer un claquage de surface, et une couche semiconductrice de type n?-¿ (36) est disposée sous la précédente dont la tension de tenue théorique est ainsi supérieure à celle de la couche semiconductrice de type n?-¿ (36). On peut donc accroître en conséquence la tension de claquage de surface. Comme la couche semiconductrice de type n?-¿ (36), à plus faible résistance, est disposée sous la couche conductrice de type n?--¿ (38), la région qui influe sur la consommation d'énergie de ce transistor bipolaire à grille isolée présente une résistance inférieure, et la consommation d'énergie s'en trouve réduite.

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