Field effect transistor limiting device

Details Field effect transistor limiting device Field effect transistor limiting device

H - Electricity

03

F

330/41

H03F 3/16 (2006.01) H03F 1/32 (2006.01) H03F 1/56 (2006.01) H03F 3/193 (2006.01) H03G 11/00 (2006.01) H04B 7/01 (2006.01)

Patent

CA 2038227

ABREGE : Dispositif limiteur a transistor à effet de champ. L'invention concerne un dispositif limiteur à transistor à effet de champ, dont le circuit de polarisation se compose de deux alimentations à tension constante : l'une sur la grille (Vgs) l'autre sur le drain (Vds), une charge résistive (Rg) étant disposée en série avec l'alimentation de la grille de ce transistor (10). Application notamment au domaine des télécommunications spatiales. FIGURE A PUBLIER : Fig. 1

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