Process for selectively etching diamond

H - Electricity – 01 – L

Patent

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H01L 21/306 (2006.01) H01L 21/04 (2006.01) H01L 21/265 (2006.01) H01L 21/3065 (2006.01)

Patent

CA 2143223

A process for selectively etching a diamond substrate comprising the steps of forming a graphitic area within a diamond substrate and selectively etching the diamond substrate with a gaseous reactant under conditions sufficient to convert the graphi- tic area to a gaseous product, preferably while substantially avoiding reacting with the diamond of the diamond substrate. The technique can be used to form a single crystal diamond layer, for example, using a lift-off technique.

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