Thin gas barrier films and rapid deposition method therefor

C - Chemistry – Metallurgy – 23 – C

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C23C 16/40 (2006.01) B65D 65/42 (2006.01) C23C 14/10 (2006.01)

Patent

CA 2048550

ABSTRACT Films are coated on substrates, useful for applications such as packaging, having a substantially continuous inorganic matrix in which organosilicon moieties are discontinuously dispersed. The inorganic matrix is formed by evaporating an inorganic source within a evacuated chamber while at the same time flowing vaporized organosilicon into the chamber adjacent to an electrically isolated substrate.

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