C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/40 (2006.01) B65D 65/42 (2006.01) C23C 14/10 (2006.01)
Patent
CA 2048550
ABSTRACT Films are coated on substrates, useful for applications such as packaging, having a substantially continuous inorganic matrix in which organosilicon moieties are discontinuously dispersed. The inorganic matrix is formed by evaporating an inorganic source within a evacuated chamber while at the same time flowing vaporized organosilicon into the chamber adjacent to an electrically isolated substrate.
Gowling Lafleur Henderson Llp
The Boc Group Inc.
LandOfFree
Thin gas barrier films and rapid deposition method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin gas barrier films and rapid deposition method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin gas barrier films and rapid deposition method therefor will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1390656