H - Electricity – 01 – J
Patent
H - Electricity
01
J
356/197, 356/22
H01J 37/00 (2006.01) H01J 37/30 (2006.01) H01J 37/304 (2006.01) H01J 37/317 (2006.01) H01L 21/70 (2006.01)
Patent
CA 1061008
ELECTRON PROJECTION MICROFABRICATION SYSTEM Abstract of the Disclosure An electron beam image of a microcircuit pattern is pro- jected from an irradiated photocathode window to a resist-coated silicon wafer through two successive lens systems having field- containing regions which communicate through a small aperture in a common pole structure that otherwise shields these regions from each other. The lens region in which the photocathode is located contains electrostatic and magnetic fields for accelerating the electrons and focusing the beam toward a crossover point in the aperture. The region in which the wafer is positioned contains only a magnetic field to correct aberrations of the beam image. The arrangement permits reduction of the image size. Beam regis- tration detectors and deflecting devices are located near the aperture in the common pole structure. Because it is isolated from objects located outside of its own lens region, the electro- static field is not perturbed by these detecting and deflecting devices or by variations in flatness of the wafer surface. Back- scattered electrons emitted from the wafer cannot be driven by the electrostatic field onto parts of the wafer surface where no exposure to electron rays is desired. The photocathode is protected from exposure to contaminants emitted by the wafer coating due to the restricted opening between the lens regions.
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