Semiconductor laser device and method of producing same

Details Semiconductor laser device and method of producing same Semiconductor laser device and method of producing same

H - Electricity

01

S

H01S 5/227 (2006.01) H01S 5/32 (2006.01) H01S 5/323 (2006.01) H01S 3/085 (1990.01) H01S 3/025 (1990.01)

Patent

CA 2089056

Abstract A semiconductor laser device comprises a III-V group p-type compound semiconductor substrate, a mesa-shaped narrow and straight multilayer double heterostructure having an active layer therein and blocking layers formed on the lateral sides of said double heterostructure in a pnp layer arrangement, and the n-type layer of said blocking layers is kept away from the lateral sides of the double heterostructure having an active layer.

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