Method of fabricating an optoelectronic device having a bulk...

H - Electricity – 01 – L

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H01L 31/00 (2006.01)

Patent

CA 2562486

A method of fabricating an optoelectronic device comprises: depositing a first layer having protrusions over a first electrode, in which the first layer comprises a first organic small molecule material; depositing a second layer on the first layer such that the second layer is in physical contact with the first layer; in which the smallest lateral dimension of the protrusions are between 1 to 5 times the exciton diffusion length of the first organic small molecule material; and depositing a second electrode over the second layer to form the optoelectronic device. A method of fabricating an organic optoelectronic device having a bulk heterojunction is also provided and comprises: depositing a first layer with protrusions over an electrode by organic vapor phase deposition; depositing a second layer on the first layer where the interface of the first and second layers forms a bulk heterojunction; and depositing another electrode over the second layer.

L'invention concerne un procédé de fabrication de dispositif optoélectronique : dépôt de première couche à protubérances sur une première électrode, cette couche comprenant un premier matériau organique à petites molécules ; dépôt de seconde couche sur la première, en contact physique avec elle ; la dimension latérale la plus petite des protubérances vaut entre 1 et 5 fois la longueur de diffusion d'exciton du premier matériau ; et dépôt d'une seconde électrode sur la seconde couche pour constituer le dispositif. On décrit aussi un procédé de fabrication de dispositif optoélectronique organique à hétérojonction massive : dépôt de première couche à protubérances sur une électrode en phase vapeur ; dépôt d'une seconde couche sur la première, l'interface entre ces couches formant une hétérojonction massive ; et enfin dépôt d'une autre électrode sur la seconde couche.

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