Semiconductor device

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H - Electricity

01

L

H01L 29/812 (2006.01) H01L 29/10 (2006.01) H01L 29/201 (2006.01) H01L 29/778 (2006.01)

Patent

CA 2091926

ABSTRACT OF THE DISCLOSURE In this MESFET, an undoped AlInAs layer 120, an undoped InP layer 130, an n-InGaAs layer 140, an undoped InP layer 150, and an AlInAs layer 160 are formed on a semi-insulating InP substrate 110. A source electrode 410, a drain electrode 430, and a gate electrode 420 are formed on the AlInAs layer 160. The source electrode 410 and the drain electrode 430 are in ohmic contact with the AlInAs layer 160, and the gate electrode 420 forms a Schottky junction with the AlInAs layer 160.

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