Process for crystal growth of iii-v group compound...

Details Process for crystal growth of iii-v group compound... Process for crystal growth of iii-v group compound...

C - Chemistry, Metallurgy

30

B

C30B 31/00 (2006.01) C30B 25/02 (2006.01) C30B 29/40 (2006.01) H01L 21/18 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2139551

A process for crystal growth of III-V group compound semiconductor, which comprises pyrolyzing, in a gas phase, a material consisting of an organometallic compound and/or a hydride in the presence of an organic compound containing an oxygen atom-carbon atom direct bond, used as a dopant to grow a III-V group compound semiconductor crystal layer containing at least aluminum, of high electric resistance. Said process can grow a compound semiconductor layer of high electric resistance by the use of a dopant which enables the independent controls of oxygen concentration and aluminum concentration and which has a small effect of oxygen remaining.

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