H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/14 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2052970
A superconducting device comprises a superconducting channel constituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of .alpha.-axis oriented oxide superconductor crystal. The superconducting channel is continuous to the superconductor source electrode and the superconductor drain electrode.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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