H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/06 (2006.01) H01L 21/335 (2006.01) H01L 29/772 (2006.01)
Patent
CA 2673330
A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.
L'invention concerne une structure semi-conductrice qui comprend des sections multiples disposées le long d'un axe longitudinal. De préférence, la structure semi-conductrice comprend une section moyenne et deux sections terminales situées à des côtés opposés de la section moyenne. Un cAEur semi-conducteur ayant une première concentration en dopant s'étend, de préférence, le long de l'axe longitudinal à travers la section moyenne et les deux sections terminales. Une enveloppe semi-conductrice ayant une seconde concentration en dopant, supérieure, entoure de préférence une partie du cAEur semi-conducteur aux deux sections terminales, mais non au niveau de la section moyenne, de la structure semi-conductrice. Il est particulièrement préféré que la structure semi-conductrice soit une nanostructure ayant une dimension en coupe de pas plus de 100 nm
Appenzeller Joerg
Guha Supratik
Tutuc Emanuel
International Business Machines Corporation
Wang Peter
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