B - Operations – Transporting – 32 – B
Patent
B - Operations, Transporting
32
B
B32B 15/00 (2006.01) C23C 14/06 (2006.01) C23C 14/08 (2006.01) H01L 31/0224 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01) C23C 14/58 (2006.01)
Patent
CA 2271412
A photovoltaic device having a substrate, a layer of Cd2SnO4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd2SnO4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd2SnO4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd2SnOa, and depositing an electrically conductive film onto the thin film of semiconductor materials.
La présente invention concerne un dispositif photovoltaïque pourvu d'un substrat, d'une couche de Cd2SnO4 disposée sur ledit substrat comme contact frontal, d'un film mince comprenant deux ou plusieurs couches de matériaux semi-conducteurs disposé sur ladite couche de Cd2SnO4, ainsi que d'un film électroconducteur disposé sur ledit film mince de matériau semi-conducteurs permettant de doter ledit film mince d'un contact électrique arrière. On réalise ce dispositif en appliquant d'abord par pulvérisation RF une couche de Cd2SnO4 sur un substrat, en déposant ensuite un film mince de matériaux semi-conducteurs sur la couche de Cd2SnO4, et enfin, en déposant un film électroconducteur sur le film mince de matériaux semi-conducteurs.
Coutts Timothy J.
Rose Douglas H.
Sheldon Peter
Wu Xuanzhi
Finlayson & Singlehurst
Midwest Research Institute
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