Control of crystal anisotropy for perovskite oxides on...

C - Chemistry – Metallurgy – 30 – B

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C30B 25/14 (2006.01) C30B 29/24 (2006.01) C30B 30/02 (2006.01) G02F 1/03 (2006.01) H01L 21/28 (2006.01) H01L 21/316 (2006.01) H01L 29/51 (2006.01) G02B 6/12 (2006.01)

Patent

CA 2337029

A crystalline structure (20, 60 or 220) and a device (120, 140, 180 or 270) which can be suited for use in any of a number of semiconductor or electro- optic applications, such as a phase modulator or a component of an interfereometer, includes a substrate (22, 62, 142, 182, 222 or 272) of a semiconductor-based material and a thin film (24, 64, 144, 186 or 224) of a crystalline oxide material epitaxially arranged upon the surface of the substrate so that the thin film couples to the underlying substrate and so that the geometries of substantially all of the unit cells of the thin film are arranged in a predisposed orientation relative to the substrate surface. The predisposition of the geometries of the unit cells of the thin film is due to a stressed or strained condition of the lattice at the interface between the thin film material and the substrate surface and is responsible for a predisposed orientation of a directional-dependent quality, such as the dipole moment, of the unit cells. The predisposed orientation of the unit cell geometries enables a device within which the structure is embodied to take beneficial advantage of characteristics of the structure during operation.

L'invention concerne une structure cristalline (20, 60 ou 220) et un dispositif (120, 140, 180 ou 270), ladite structure, qui peut être adaptée à plusieurs applications électro-optiques ou de semi-conducteurs telles qu'un modulateur de phase ou un composant d'un interféromètre, comprenant un substrat (22, 62, 142, 182, 222 ou 272) d'un matériau à base de semi-conducteur et un film mince (24, 64, 144, 186 ou 224) d'un matériau d'oxyde cristallin disposé de manière épitaxiale à la surface du substrat de manière à ce qui le film mince soit relié au substrat sous-jacent et que la disposition de pratiquement toutes les cellules unités du film mince se caractérise par une orientation prédéterminée par rapport à la surface de substrat. La prédisposition géométrique des cellules unités du film mince est due à l'état tendu ou précontraint du réseau à la jonction entre le matériau en film mince et la surface du substrat. Cette prédisposition géométrique est responsable d'une orientation prédisposée d'une qualité dépendant de la direction telle que le moment dipolaire des cellules unités. L'orientation prédéterminée de la géométrie des cellules unités permet de créer un dispositif comportant une structure qui permet de bénéficier des caractéristiques avantageuses de ladite structure pendant le traitement.

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