Semiconductor laser device having a diffraction grating on a...

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H01S 5/026 (2006.01) G02B 5/18 (2006.01) H01L 33/00 (2006.01) H01S 5/125 (2006.01) H01S 5/14 (2006.01) H01S 3/094 (2006.01) H01S 3/0941 (2006.01) H01S 5/10 (2006.01)

Patent

CA 2374274

A semiconductor device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet, and a partial diffraction grating having a predetermined length and positioned on a light reflecting side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient of the diffraction grating. The semiconductor device may also include another partial diffraction grating positioned on the light emitting side of the laser device.

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