Thermal disproportionation of cycloalkylsilanes

C - Chemistry – Metallurgy – 07 – F

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C07F 7/12 (2006.01)

Patent

CA 2082750

-9- THERMAL DISPROPORTIONATION OF CYCLOALKYLSILANES ABSTRACT The present invention is a process for the thermal disproportionation of cycloalkylsilanes containing at least one hydrogen atom and one halogen atom bonded to a single silicon atom. The process involves heating the cycloalkyl- silanes in a liquid phase to a temperature within a range of about 250°C. to 450°C. The present process is especially useful for the thermal disproportionation of cyclopentyl- dichlorosilane to dicyclopentyldichlorosilane and for the thermal disproportionation of cyclohexyldichlorosilane to dicyclohexyldichlorosilane.

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