H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/02 (2006.01) C30B 29/36 (2006.01) H01L 21/20 (2006.01) H01L 21/336 (2006.01) H01L 29/12 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2761428
A silicon carbide substrate (1) with which manufacturing cost of a semiconductor device using the silicon carbide substrate can be reduced is provided with: a base substrate (10) composed of a silicon carbide; and a SiC layer (20), which is composed of single crystal silicon carbide other than the silicon carbide of the base substrate (10) and is disposed on the base substrate (10) in contact with the base substrate. Thus, in the silicon carbide substrate (1), the silicon carbide single crystal can be effectively used.
L'invention porte sur un substrat en carbure de silicium (1) grâce auquel le coût de fabrication d'un dispositif à semi-conducteurs utilisant le substrat en carbure de silicium peut être réduit, lequel substrat comprend : un substrat de base (10) composé d'un carbure de silicium ; et une couche SiC (20) qui est composée d'un carbure de silicium monocristallin autre que le carbure de silicium du substrat de base (10) et est agencée sur le substrat de base (10) en contact avec le substrat de base. Ainsi, dans le substrat en carbure de silicium (1), le monocristal de carbure de silicium peut être efficacement utilisé.
Fujiwara Shinsuke
Harada Shin
Namikawa Yasuo
Nishiguchi Taro
Sasaki Makoto
Marks & Clerk
Sumitomo Electric Industries Ltd.
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