Power devices in wide bandgap semiconductor

Details Power devices in wide bandgap semiconductor Power devices in wide bandgap semiconductor

H - Electricity

01

L

H01L 29/78 (2006.01) H01L 21/76 (2006.01) H01L 29/10 (2006.01) H01L 29/24 (2006.01) H01L 29/739 (2006.01)

Patent

CA 2295248

An insulated gate power semiconductor switching device (11) such as a lateral DMOSFET or a lateral IGBT disposed on a semi-insulating substrate (12). In particular, the substrate may consist of semi-insulating silicon carbide, eg. vanadium-doped SiC. Accordingly, high voltage lateral field-effect can be manufactured using readily available silicon carbide wafers having epilayers of about 10-15 micrometers.

L'invention concerne des dispositifs préférés qui comprennent un dispositif à semi-conducteur tel qu'un dispositif de commutation de très haute puissance fabriqué sur un substrat isolé par jonction ou semi-isolant (par exemple, du carbure de silicium).

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