Light emitting devices having a reflective bond pad and...

H - Electricity – 01 – L

Patent

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H01L 33/62 (2010.01)

Patent

CA 2572247

Light emitting devices include an active region (14) of semiconductor material and a first contact (18) on the active region. The first contact (18) is configured such that photons emitted by the active region (14) pass through the first contact. A photon absorbing wire bond pad (22) is provided on the first contact. The wire bond pad (22) has an area less than the area of the first contact. A reflective structure (30) is disposed between the first contact (18) and the wire bond pad (22) such that the reflective structure (30) has substantially the same area as the wire bond pad. A second contact (20) is provided opposite the active region from the first contact. The reflective structure (30) may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

L'invention concerne des dispositifs électroluminescents comprenant une région active d'un matériau semiconducteur et un premier contact situé dans la région active. Le premier contact est configuré de sorte que les photons émis par la région active traversent le premier contact. Un plot de connexion par fils absorbeur de photons est ménagé sur le premier contact. Le plot de connexion par fils présente une zone inférieure à la zone du premier contact. Une structure réfléchissante est disposée entre le premier contact et le plot de connexion par fils de sorte que la structure réfléchissante présente une zone sensiblement identique à celle de plot de connexion par fils. Un second contact est disposé à l'opposé de la région active en partant du premier contact. La structure réfléchissante peut être disposée uniquement entre le premier contact et le plot de connexion par fils. L'invention concerne en outre des procédés de fabrication desdits dispositifs.

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