H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/336 (2006.01) H01L 21/8234 (2006.01) H01L 29/76 (2006.01) H01L 29/78 (2006.01)
Patent
CA 2393443
A MISFEED device system and method of fabricating same are disclosed. The present invention utilizes Shotky barrier contacts (301, 302) for source and/or drain contact fabrication within the context of a MISFEED device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the present invention unconditionally eliminates the parasitic bipolar gin associated with MISFEED fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art.
L'invention concerne un système à base de dispositif à transistor MOS et un procédé de fabrication correspondant. On utilise des contacts à barrière de Schottky (301, 302) pour la fabrication de contacts de source et/ou de drain dans le contexte d'une structure de dispositif à transistor MOS pour ne pas être contraint d'utiliser des implantations du type halo/poche et des extensions de source/drain de type peu profond visant à contrôler les effets de canal court. En outre, l'invention permet d'éliminer sans condition le gain bipolaire parasite associé à la fabrication des transistors MOS, de réduire les coûts de fabrication, de rendre plus rigoureux le contrôle des paramètres de performance des dispositifs, et d'assurer des caractéristiques de dispositif supérieures par rapport à l'état antérieur de la technique.
Riches Mckenzie & Herbert Llp
Spinnaker Semiconductor Inc.
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