Semiconductor device with amorphous carbon layer and method...

Details Semiconductor device with amorphous carbon layer and method... Semiconductor device with amorphous carbon layer and method...

H - Electricity

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L

H01L 23/00 (2006.01) H01L 21/205 (2006.01) H01L 21/31 (2006.01) H01L 21/314 (2006.01) H01L 21/762 (2006.01) H01L 21/768 (2006.01) H01L 21/82 (2006.01) H01L 21/822 (2006.01) H01L 23/532 (2006.01) H01L 29/73 (2006.01) H01L 21/312 (2006.01)

Patent

CA 2157257

The invention provides a semiconductor device in which interlayer insulative layers are composed of amorphous carbon film. The amorphous carbon film may include fluorine (F) therein. The invention further provides a method of fabricating a semiconductor device including an interlayer insulative layer composed of amorphous carbon film including fluorine (F), the method having the step of carrying out plasma-enhanced chemical vapor deposition (PCVD) using a mixture gas including (a) at least one of CF4, C2F6, C3F8, C4F8 and CHF3, and (b) at least one of N2, NO, NO2, NH3 and NF3. The method provides amorphous carbon film having superior heat resistance and etching characteristics. By composing interlayer insulative layers of a semiconductor device of the amorphous carbon film, the semiconductor device can operate at higher speed.

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