Apparatus for large area plasma processing

H - Electricity – 01 – J

Patent

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H01J 37/32 (2006.01)

Patent

CA 2752183

An apparatus for large area plasma processing according to the invention comprises at least one plane antenna (A) having a plurality of interconnected elementary resonant meshes (Ml, M2, M3), each mesh (Ml, M2, M3) comprising at least two conductive legs (1, 2) and at least two capacitors (5, 6). A radiofrequency generator excites said antenna (A) to at least one of its resonant frequencies. A process chamber is in proximity of said antenna (A). Said antenna (A) produces an electromagnetic field pattern with a very well defined spatial structure, which allows a great control on the excitation of the plasma.

La présente invention concerne un appareil permettant de traiter au plasma une zone étendue. Cet appareil comprend au moins une antenne plane (A) comportant une pluralité de mailles résonantes élémentaires interconnectées (M1, M2, M3), chaque maille (M1, M2, M3) comprenant au moins deux branches conductrices (1, 2) et au moins deux condensateurs (5, 6). Un générateur de radiofréquences excite ladite antenne (A) à l'une au moins de ses fréquences de résonance. Une chambre de traitement est située à proximité de ladite antenne (A). Ladite antenne (A) produit une forme de champ électromagnétique présentant une structure spatiale très bien définie, ce qui permet de bien gérer l'excitation du plasma.

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