H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/14 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2084983
A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from each other, an extremely thin superconducting channel formed of the oxide superconductor between the superconducting source region and the superconducting drain region. The superconducting channel electrically connects the superconducting source region to a superconducting drain region, so that a superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device comprises a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, and non-superconducting oxide layers having a similar crystal structure to that of the oxide superconductor. The non-superconducting oxide layers contact with at least the superconducting source region and the superconducting drain region. In the superconducting device, the superconducting channel, the superconducting source region and the superconducting drain region are formed of one oxide superconductor thin film of which the center portion is c-axis oriented and the both ends are .alpha.-axis oriented.
Iiyama Michitomo
Inada Hiroshi
Nakamura Takao
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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