H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/00 (2006.01) C30B 25/04 (2006.01) C30B 25/18 (2006.01) H01L 21/20 (2006.01) H01S 5/02 (2006.01) H01S 5/323 (2006.01)
Patent
CA 2412999
The invention relates to a nitride semiconductor substrate and a method of manufacturing the same. A nitride semiconductor substrate in accordance with the invention comprises a supporting substrate formed by growing an over layer made of nitride semiconductor over the entire surface of a substrate made of different material; a first nitride semiconductor layer having periodically arranged T-shaped cross sections formed by laterally growing nitride semiconductor films starting at portions formed in any one of a periodical stripe, grid or island configuration provided on the surface of said supporting substrate and stopping the lateral growth before said nitride semiconductor films join together; and a second nitride semiconductor layer which is grown laterally from the top surface or the top and side surfaces of said T-shaped cross sections of said first nitride semiconductor layer to cover the entire surface of said supporting substrate, wherein cavities are formed below respective joints of said second nitride semiconductor layer, and V-shaped grooves are formed on the surface of said over layer.
Un substrat semi-conducteur de nitrure comprend (a) un substrat de support, (b) une première couche semi-conductrice de nitrure qui est dotée d'une section transversale en forme de T intermittente et qui a crû des portions en forme de bande, de grille ou d'îlot disposées de manière intermittente sur ledit substrat de support, et (c) un second substrat semi-conducteur de nitrure qui couvre ledit substrat de support et a crû des surfaces supérieures et latérales de la première couche semi-conductrice de nitrure, une cavité étant formée sous la seconde couche semi-conductrice de nitrure. La première couche semi-conductrice de nitrure a poussé latéralement à partir de la portion exposée du substrat. Cette croissance est arrêtée avant que la première couche semi-conductrice de nitrure ne couvre le substrat de support. Ainsi, ladite première couche semi-conductrice de nitrure présente une section transversale en forme de T intermittente. Puis, la couche de protection est enlevée et la seconde couche semi-conductrice de nitrure croît de la surface supérieure et latérale de la première couche semi-conductrice de nitrure afin de couvrir le substrat.
Chocho Kazuyuki
Kiyoku Hiroyuki
Kozaki Tokuya
Maegawa Hitoshi
Kirby Eades Gale Baker
Nichia Corporation
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