Semiconductor surface emitting laser having enhanced...

Details Semiconductor surface emitting laser having enhanced... Semiconductor surface emitting laser having enhanced...

H - Electricity

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H01S 5/183 (2006.01) H01S 5/026 (2006.01) H01S 5/042 (2006.01) H01S 5/062 (2006.01) H01S 5/42 (2006.01) H01S 3/18 (1990.01)

Patent

CA 2118992

-7- SEMICONDUCTOR SURFACE EMITTING LASER HAVING ENHANCED POLARIZATION CONTROL AND TRANSVERSE MODE SELECTIVITY Abstract Applicant has demonstrated that by appropriately shaping the laser gain region one can control the polarization direction of semiconductor vertical cavity lasers and enhance their transverse mode selectivity. Specifically, configuring the transverse cross section to regions have a length-to-width ratio in excess of 1.2 favors emission with polarization in the long dimension at the fundamental mode. A cruciform structure favors emission with switchable orthogonal polarization. Thetransverse shape can be configured by dry etching a particular cavity shape in index guided lasers or by forming a shaped ion implantation region around gain guided lasers.

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