H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/0216 (2006.01) H01L 31/0224 (2006.01) H01L 31/068 (2006.01) H01L 21/225 (2006.01)
Patent
CA 2721298
A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phospho-rous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g) complete removal of the phosphorous silicate glass (2) from the silicon.
Un procédé de dopage sélectif du silicium d'un substrat de silicium (1), pour la production d'une jonction pn dans le silicium, est caractérisé par les étapes suivantes : a) application à la surface du substrat de silicium (1) d'un dopant à base de phosphore (2), b) ensuite chauffage du substrat de silicium (1) afin de produire un verre de silicate de phosphore (2) à la surface du silicium, le phosphore se diffusant simultanément dans le silicium pour constituer un premier dopage (3), c) application sur le verre de silicate de phosphore (2) d'un masque (4) qui recouvre les zones (5) qui seront fortement dopées, d) élimination du verre de silicate de phosphore (2) dans les zones non masquées, e) élimination du masque (4) de la couche de verre de silicate de phosphore (2), f) nouveau chauffage pour poursuivre la diffusion de phosphore provenant du verre de silicate de phosphore (2) dans le silicium, pour constituer le second dopage produisant les zones fortement dopées (5), g) élimination totale du verre de silicate de phosphore (2) sur le silicium.
Gebr. Schmid Gmbh & Co.
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
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