Method of fabricating semiconductor laser device

Details Method of fabricating semiconductor laser device Method of fabricating semiconductor laser device

H - Electricity

01

S

H01S 5/16 (2006.01) H01S 5/028 (2006.01) H01S 5/02 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2051254

A method of fabricating a semiconductor laser device includes disposing a lower cladding layer, a superlattice active layer, an upper cladding layer, and a contact layer in the named order on a substrate, disposing, on resonator end surfaces, films containing a material which can cause disorder of the semiconductor superlattice structure at a high temperature, and causing current to flow between the substrate and the contact layer to cause laser oscillations. The laser oscillations cause laser light to be generated, which is absorbed at the resonator end surfaces. The resonator end surfaces are locally heated due to absorption of laser light, whereby the disorder-causing material is diffused into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonant end surfaces is disordered to thereby form window regions.

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