Thin film resonator apparatus and method of making same

Details Thin film resonator apparatus and method of making same Thin film resonator apparatus and method of making same

H - Electricity

01

P

H01P 11/00 (2006.01) H01L 41/08 (2006.01) H01P 7/00 (2006.01) H03H 3/02 (2006.01) H03H 9/17 (2006.01)

Patent

CA 2314375

A thin film resonator (TFR) is produced with an improved piezoelectric film which is epitaxially grown on a growing surface, resulting in a piezoelectric film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxially growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.

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