Short channel field effect transistors

Details Short channel field effect transistors Short channel field effect transistors

H - Electricity

01

L

356/73

H01L 21/42 (2006.01) H01L 21/28 (2006.01) H01L 21/285 (2006.01)

Patent

CA 1157165

Lepselter, M. P. 47-7 - 18 - SHORT CHANNEL FIELD EFFECT TRANSISTORS Abstract In the fabrication of a metal oxide semiconductor field effect transistor (MOSFET) or of a metal gate field effect transistor (MESFET), characterized by a polycrystalline silicon gate and a short channel of about a micron or less, a sequence of steps is used involving the simultaneous formation of source, drain, and gate electrode contacts by a bombardment with a transition metal, such as platinum, which forms metal-silicide layers on the source and drain regions as well as the silicon gate electrode.

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