Method of manufacturing semiconductor article

Details Method of manufacturing semiconductor article Method of manufacturing semiconductor article

H - Electricity

01

L

H01L 21/223 (2006.01) H01L 21/20 (2006.01) H01L 21/762 (2006.01)

Patent

CA 2221245

A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.

L'invention est une méthode de fabrication d'articles à semi-conducteur qui comporte les opérations suivantes: formation d'une zone de diffusion sur l'une des faces au moins d'un substrat de silicium en y diffusant un élément qui permet de contrôler le type de conduction, formation d'une couche de silicium poreuse dans une région qui comprend la zone de diffusion, préparation d'un premier substrat en formant une couche de semi-conducteur non poreuse sur la couche de silicium poreuse, collage du premier substrat et d'un second substrat pour produire une structure multicouche à l'intérieur de laquelle se trouve la couche de semi-conducteur non poreuse, séparation de la structure multicouche au niveau de la couche de silicium poreuse mais non dans la zone de diffusion et enlèvement de la couche de silicium poreuse résiduelle sur le second substrat.

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