Three-dimensional etching process

Details Three-dimensional etching process Three-dimensional etching process

G - Physics

03

F

G03F 7/36 (2006.01) G02B 3/00 (2006.01) G03F 7/00 (2006.01) G03F 7/40 (2006.01) H01L 21/033 (2006.01)

Patent

CA 2242634

A method of forming three-dimensional structures on a substrate by a single reactive ion etch run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give rise to reduction in the mask area and exposure of further areas of substrate.

L'invention porte sur un procédé permettant de produire des structures tridimensionnelles sur un substrat au moyen d'un seul passage de gravure par ion réactif, grâce à quoi est constitué un masque sur ledit substrat avant qu'il ne soit procédé à une série d'itérations, chacune comportant une gravure de masque et une gravure de substrat, se soldant par une réduction de l'aire du masque et de l'exposition d'autres aires du substrat.

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