Process for preparing high crystallinity oxide thin film

Details Process for preparing high crystallinity oxide thin film Process for preparing high crystallinity oxide thin film

H - Electricity

01

L

H01L 39/24 (2006.01) C23C 14/00 (2006.01) C23C 14/08 (2006.01) C30B 23/02 (2006.01)

Patent

CA 2152718

A process for preparing an oxide superconductor thin film which has a high crystallinity, clean and excellent superconductive surface on a substrate by reactive co-evaporation. The reactive co-evaporation process comprises the steps of evacuating the vacuum chamber to a pressure of 1 x 10-9 torr or lower, supplying an oxidizing gas selected from the group consisting of O2 including not less than 5 volume percent O3, pure N2O and pure NO2 so that a pressure in the proximity of the substrate becomes 6 x 10-6 to 8 x 10-5 Torr while a pressure in the proximity of the evaporation source becomes 1 x 10-9 Torr or lower, heating the substrate, and emitting a molecular beam onto the heated substrate so that the molecular beam is oxidized on and near the substrate and an oxide superconductor film is deposited on the substrate.

Affiliated with

Also associated with

Rating

Process for preparing high crystallinity oxide thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for preparing high crystallinity oxide thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for preparing high crystallinity oxide thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1557988