Silicon-on-insulator (soi) junction field effect transistor...

H - Electricity – 01 – L

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

H01L 27/098 (2006.01)

Patent

CA 2660885

A semiconductor device including complementary junction field effect transistors (JFETs) manufactured on a silicon on insulator (SOI) wafer is disclosed. A p- type JFET includes a control gate (170) formed from n-type polysilicon and an n-type JFET includes a control gate (110) formed from .rho.-type polysilicon. The complementary JFETs may include four terminal JFETs having a back gate formed below a channel region. The back gate may be electrically connected to a control gate formed above a channel region via a cut region in an isolation structure. Furthermore, the complementary JFETs may be formed on strained silicon formed on a silicon germanium (SiGe) or silicon germanium carbon (SiGeC) layer, or the like.

L'invention concerne un dispositif semi-conducteur comprenant des transistors à effet de champ à jonction complémentaire (JFET) fabriqués sur une tranche de silicium sur isolant (SOI). Un JFET de type p comprend une grille de commande formée à partir d'un polysilicium de type n et un JFET de type n comprend une grille de commande formée à partir d'un polysilicium de type p. Les JFET complémentaires peuvent comprendre quatre bornes JFET ayant une grille arrière formée en dessous d'une région de canal. La grille arrière peut être connectée électriquement à une grille de commande formée au-dessus d'une région de canal par l'intermédiaire d'une région de découpe dans une structure d'isolation. En outre, les JFET complémentaires peuvent être formés sur du silicium étiré formé sur une couche de silicium germanium (SiGe) ou de silicium germanium carbone (SiGeC) ou autre silicium similaire.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Silicon-on-insulator (soi) junction field effect transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-on-insulator (soi) junction field effect transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-on-insulator (soi) junction field effect transistor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1558137

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.