Stabilization of the interface between aluminum and titanium...

Details Stabilization of the interface between aluminum and titanium... Stabilization of the interface between aluminum and titanium...

H - Electricity

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H01L 23/485 (2006.01) H01L 21/441 (2006.01) H01L 21/471 (2006.01) H01L 21/60 (2006.01) H01L 23/522 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2041730

A semiconductor device comprises at least one metal interconnect layer, a titanium-based barrier layer in contact with the metal interconnect layer. The metal interconnect layer contains titanium in an amount up to the limit of solid solubility at the peritectic temperature. The arrangement is effective to reduce hillock, spike, and notch formation in the semiconductor device.

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