H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/072 (2006.01) H01L 27/148 (2006.01) H01L 31/102 (2006.01) H01L 31/112 (2006.01)
Patent
CA 2137696
The invention relates to a charge transfer device. Such devices include at least one insulated conductive grid (3) connecting two semiconductor areas. According to the invention, each insulated conductive grid (3) has a width which gradually increases from the first semiconductor area (1) to the second semiconductor area (2). The width of each grid (3) is sufficiently narrow for the potential trough created by applying a voltage (V) to the grid to have a gradually increasing depth from the first area (1) to the second area (2), thus driving the charges. The invention can be applied to any charge transfer device and particularly to photodiodes.
L'invention concerne un dispositif à transfert de charges. De tels dispositifs comprennent au moins une grille conductrice isolée (3) reliant deux zones semiconductrices. Selon l'invention chaque grille conductrice isolée (3) a une largeur progressivement croissante de 1a première zone semiconductrice (1) vers la deuxième zone semiconductrice (2). La largeur de chaque grille (3) est suffisamment étroite pour que le puits de potentiel crée par l'application d'une tension V à la grille ait une profondeur croissant progressivement de la première zone (1) vers la deuxième zone (2), permettant ainsi l'entraînement des charges. L'invention s'applique à tout type de dispositif à transfert de charges et particulièrement aux photodiodes.
Caranhac Sophie
Thenoz Yves
Goudreau Gage Dubuc
Thomson-Csf Semiconducteurs Specifiques
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