C - Chemistry – Metallurgy – 08 – J
Patent
C - Chemistry, Metallurgy
08
J
C08J 5/04 (2006.01) C30B 19/12 (2006.01) C30B 25/18 (2006.01) D01D 11/00 (2006.01) G11B 7/00 (2006.01) G11B 7/24 (2006.01)
Patent
CA 2060362
-41- DEPOSITION OF HIGHLY-ORIENTED PTFE FILMS AND USES THEREFOR Abstract of the Disclosure Broadly the invention is a method for forming a highly oriented crystal structure on a substrate in a known orientation comprising the steps of forming a film of poly(tetrafluoroethylene) with an orientation angle of less than 20° on a surface of the substrate with its nominal orientation director along a desired orientation director and then depositing a crystal-forming material on the highly oriented poly(tetrafluoroethylene) to form the structure. Specific examples include a method for growing a highly oriented crystal on filament substrates, a method for producing extruded polymer articles (fibers, tapes, and solids) containing oriented crystal growth to improve the characteristics thereof, and a method for storing and retrieving data.
Smith Paul
Wittmann Jean
Ade & Company
The Regents Of The University Of California
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