Semiconductor layer for thin film transistor

Details Semiconductor layer for thin film transistor Semiconductor layer for thin film transistor

H - Electricity

01

L

H01L 21/34 (2006.01) C23C 18/08 (2006.01) H01L 21/368 (2006.01) H01L 21/46 (2006.01) H01L 49/02 (2006.01) B41J 2/01 (2006.01) B41J 15/00 (2006.01)

Patent

CA 2631046

A method for making a zinc oxide semiconductor layer for a thin film transistor using solution processing at low temperatures is disclosed. The method comprises making a solution comprising a zinc salt and a complexing agent; applying the solution to a substrate; and heating the solution to form a semiconductor layer on the substrate. A thin film transistor using this zinc oxide semiconductor layer has good mobility and on/off ratio.

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