Aluminum nitride arc discharge vessel having high total...

Details Aluminum nitride arc discharge vessel having high total... Aluminum nitride arc discharge vessel having high total...

H - Electricity

01

J

H01J 61/30 (2006.01) H01J 9/24 (2006.01)

Patent

CA 2490383

Aluminum nitride arc discharge vessels having a high total transmittance may be made by annealing the as-sintered AIN vessel in a nitrogen atmosphere, preferably at a temperature of at least about 1850°C and for a time of at least about 50 hours. The annealing increases the total transmittance of the vessel to greater than 92% in the wavelength region from about 400nm to about 700nm. The annealed AIN discharge vessels are useful for lamp applications, such as metal halide lamps, and offer an improved durability and life over polycrystalline alumina (PCA).

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