Substrate for forming high-strength thin semiconductor...

Details Substrate for forming high-strength thin semiconductor... Substrate for forming high-strength thin semiconductor...

H - Electricity

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H01L 31/02 (2006.01) H01L 31/0236 (2006.01) H01L 31/0352 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2259777

A substrate for forming a high-strength thin semiconductor element includes a thick portion and a thin portion in the front surface or in both front and rear surfaces of the substrate, the thick portion maintaining a thickness of the substrate as initially used or having a thickness that gives a sufficient strength to the substrate, the thin portion being formed by selectively removing a portion of the substrate other than the thick portion and having a thickness smaller than the thick portion and larger than or equal to 20 µm.

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