H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/20 (2006.01) H01L 21/265 (2006.01) H01L 21/304 (2006.01) H01L 21/322 (2006.01) H01L 21/762 (2006.01)
Patent
CA 2221100
A novel process for producing a semiconductor article is disclosed which comprises steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.
Nouveau procédé pour la fabrication d'un article semi-conducteur comportant les étapes suivantes : préparation d'un premier substrat composé de silicone, d'une couche semiconductrice non poreuse formée à la surface du substrat en silicone, formation d'une couche d'implantation ionique sur le substrat ou sur la couche non poreuse; liaisonnement du premier substrat au second substrat pour l'obtention d'une structure multicouches avec la couche non poreuse à l'intérieur; séparation de la structure multicouches au niveau de la couche d'implantation ionique, et enlèvement de la couche d'implantation ionique restée sur le deuxième substrat.
Sakaguchi Kiyofumi
Yonehara Takao
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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