Hybrid circuit having nanotube electromechanical memory

G - Physics – 11 – C

Patent

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Details

G11C 11/00 (2006.01) G11C 13/02 (2006.01) H01L 21/768 (2006.01) B81B 3/00 (2006.01)

Patent

CA 2454366

A hybrid memory system having electromechanical memory cells (103) is disclosed. A memory cell core circuit has an array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon (101). An access circuit provides array addresses to the memory cell core circuit to select at least one corresponding cell. The access circuit is constructed of semiconductor circuit elements.

L'invention concerne un système mémoire hybride comportant des cellules de mémoire électromécanique. Un circuit central de cellules de mémoire comporte un réseau de cellules de mémoire électromécanique, dans lequel chaque cellule constitue une jonction crossbar dont au moins un élément est un nanotube ou un ruban de nanotubes. Un circuit d'accès fournit au circuit central de cellules de mémoire des adresses de réseau qui permettent de choisir au moins une cellule correspondante. Le circuit d'accès se compose d'éléments de circuit semi-conducteur.

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