Field effect transistor device means control system

G - Physics – 05 – F

Patent

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323/10

G05F 1/44 (2006.01) H03K 17/687 (2006.01)

Patent

CA 1154089

ABSTRACT OF THE DISCLOSURE Field effect transistor device means of the bilateral insulated gate type have been disclosed as power switches that are capable of being switched between a conductive and a non- conductive state. A means for deriving energy for the operation of the field effect transistor devices has been disclosed which is wholly independent of current drawn through the substrate electrode means of the field effect transistor devices themselves, and which is capable of use in multiple control systems applications.

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