Method for the production of a semiconductor component

Details Method for the production of a semiconductor component Method for the production of a semiconductor component

H - Electricity

01

L

H01L 21/762 (2006.01) H01L 21/331 (2006.01) H01L 27/06 (2006.01) H01L 27/088 (2006.01)

Patent

CA 2511842

Disclosed is a method for the production of a semiconductor element comprising at least one first vertical power component (5, 9) and at least one lateral, active component (6) and/or at least one second vertical power component (10), between which at least one trench (2) filled with at least one type of insulation (4) is disposed. The invention also relates to a semiconductor component produced according to said method. The semiconductor component is essentially characterized by an eccentric or concentric arrangement of the respective functional elements (5, 6, 9, 10) which are respectively separated from each other by trench insulation. In order to produce one such semiconductor element, at least one trench is etched into the front side of a silicon substrate (1). Said trench fully encompasses at least one partial surface of the front side and is subsequently filled with insulation (4). In a further stage of said method, the silicon substrate (1) is extensively thinned from the rear side to the insulation (4), i.e. up to the lower side of the insulation. The power components (5, 9, 10) are contacted from the rear side.

Procédé de fabrication d'un élément à semi-conducteur qui comporte au moins un premier composant de puissance (5, 9) vertical ainsi qu'au moins un composant latéral actif (6) et / ou au moins un deuxième composant de puissance (10) vertical entre lesquels est placé au moins une tranchée (2) remplie d'un isolant (4), et élément à semi-conducteur fabriqué selon ledit procédé. Ledit élément à semi-conducteur se caractérise pour l'essentiel par une disposition excentrique ou concentrique des éléments fonctionnels (5, 6, 9, 10) séparés les uns des autres par des tranchées isolantes. Pour fabriquer un élément à semi-conducteur de ce type, on grave sur la face avant d'un substrat de silicium (1) au moins une tranchée (2) qui entoure totalement au moins une partie de surface de la face avant et qui est ensuite remplie par un isolant (4). Lors d'une étape ultérieure dudit procédé, le substrat de silicium (1) est aminci sur toute sa surface, sur sa face arrière, jusqu'à l'isolant (4), plus précisément jusqu'au côté inférieur de l'isolant. La mise en contact des composants de puissance (5, 9, 10) s'effectue à partir de la face arrière.

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