G - Physics – 02 – B
Patent
G - Physics
02
B
G02B 6/42 (2006.01) H01L 31/0203 (2006.01) H01L 31/06 (2006.01) H01L 31/105 (2006.01) H01S 5/022 (2006.01) H01S 3/025 (1990.01) H01S 3/133 (1990.01) H01S 3/18 (1990.01)
Patent
CA 2088286
A semiconductor laser device in which a housing with an optical fiber inserted in is secured to a header with a semiconductor laser chip mounted on is integrated, the light emitting surface of the semiconductor laser chip and the end surface of the optical of fiber are opposed to each other, and there is provided a phododiode chip for detecting the signal light emitted from the backside (rear end surface) of the light emitting surface of the semiconductor laser chip, the photodiode chip including on the light detecting surface opposed to the rear end surface of the semiconductor laser chip a p-n junction for outputting a photocurrent in a detected signal and a region for capturing carriers generated in a peripheral area of the p-n junction. The semiconductor laser device can operate stably, and the positioning of the photodiode can be less strict. The photodiode can be easily mounted. Because the charge capturing region covered with an antireflection film absorbs an unnecessary component of the signal light, a semiconductor laser device which generates neither reflected light nor scattered light, which makes its operation unstable, and can stably operate.
Kuhara Yoshiki
Murakami Kazuhito
Nakanishi Hiromi
Tonai Ichiro
Marks & Clerk
Sumitomo Electric Industries Ltd.
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