Slant-surface silicon wafer having a reconstructed...

Details Slant-surface silicon wafer having a reconstructed... Slant-surface silicon wafer having a reconstructed...

H - Electricity

01

L

H01L 21/18 (2006.01) C30B 33/00 (2006.01) H01L 21/302 (2006.01) H01L 21/304 (2006.01) H01L 21/66 (2006.01) H01L 29/04 (2006.01)

Patent

CA 2172233

A single crystal silicon wafer is sliced off so as to have a slant surface that is inclined from plane (001) such that the normal of the slant surface is inclined by 0.01° to 0.2° from direction [001] toward direction [110]. After being cleaned, the silicon wafer is heat-treated at 600-1, 300°C for not less than 1 minute in an ultrapure argon or hydrogen atmosphere containing nitrogen at not more than 0.1 ppm, to thereby cause the slant surface to have a stepped crystal surface structure. The stepped crystal surface structure is constituted of step walls Sa and Sb when it has been formed by a heat treatment in an argon atmosphere, and substantially all of its step walls are of a type Sb when it has been formed by a heat treatment in a hydrogen atmosphere.

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