Thyristor with breakdown region

Details Thyristor with breakdown region Thyristor with breakdown region

H - Electricity

01

L

H01L 29/08 (2006.01) H01L 23/62 (2006.01) H01L 29/10 (2006.01) H01L 29/74 (2006.01) H01L 31/111 (2006.01) H01L 29/743 (1990.01)

Patent

CA 2095769

Abstract of the Disclosure: A thyristor includes a semiconductor body with a surface. The semiconductor body has an inner zone of a first conduc- tion type; a cathode-side base zone of a second conduction type opposite the first type, the base zone having a recess formed therein; a layer of the second conduction type being disposed on the surface of the semiconductor body, being disposed in the cathode-side base zone, being thinner than the cathode-side base zone, and being joined to the cathode- side base zone; and an additional zone of the second conduc- tion type being disposed in the recess, being joined to the layer, being thicker than the layer, and being spaced apart from the cathode-side base zone.

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