Method for manufacturing semiconductor light-receiving elements

Details Method for manufacturing semiconductor light-receiving elements Method for manufacturing semiconductor light-receiving elements

H - Electricity

01

L

H01L 31/105 (2006.01) H01L 31/18 (2006.01)

Patent

CA 2088800

A method for manufacturing semiconductor light-receiving elements comprising forming an epitaxial layer including a light-receiving layer composed of at least In, Ga, and As on an n-InP substrate by supplying at least In gas, Ga gas, and As gas to a surface of the n-InP substrate from one side of a container accommodating the n-InP substrate. A p-type layer is formed in the configuration of a floating island by thermally diffusing a p-type impurity into the light-receiving layer. Finally, the n-InP substrate on which the p-type layer has been formed is separated into semiconductor light- receiving elements.

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