Semiconductor pressure sensor and method of manufacturing...

Details Semiconductor pressure sensor and method of manufacturing... Semiconductor pressure sensor and method of manufacturing...

G - Physics

01

L

G01L 9/04 (2006.01) G01L 9/00 (2006.01) H01L 29/84 (2006.01)

Patent

CA 2319570

A portion corresponding to a pressure sensitive region of an n-type monocrystalline Si layer (1) is etched to an SiO2 layer (2) by using the SiO2 layer (2) as the etching stopper layer. The exposed SiO2 layer (2) is removed by etching. A predetermined amount of pressure sensitive region of an n-type monocrystalline Si layer (3) is etched to form a diaphragm (4). In such a way the SiO2 layer (2) is removed from the diaphragm (4) and a diaphragm edge portion (6).

Une partie correspondant à une région sensible à la pression d'une couche Si (1) monocristalline du type n est gravée sur une couche SiO2, ladite couche SiO2 (2) étant utilisée en tant que couche d'arrêt de gravure. La couche SiO2 (2) est éliminée par attaque chimique. Une quantité prédéterminée de la région sensible à la pression d'une couche Si (3) monocristalline de type n est gravée pour former un diaphragme (4). De cette manière, la couche SiO2 est éliminée du diaphragme (4) et d'une partie (6) de bord du diaphragme.

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