H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/12 (2006.01) H01L 39/14 (2006.01)
Patent
CA 2093732
Abstract of the Disclosure: A superconducting device comprises a thin superconducting channel formed of an oxide superconductor, a superconducting source region and a superconducting drain region formed of an oxide superconductor at the both ends of the superconducting channel which connects the superconducting source region and the superconducting drain region, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region. The superconducting device further includes a gate electrode through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel. The length of the gate electrode ranges from one third of the length of the superconducting channel to one and a half length of the superconducting channel.
Iiyama Michitomo
Tanaka So
Bereskin & Parr
Sumitomo Electric Industries Ltd.
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